AGUNG SETYOBUDI. ABSTRAK. Penelitian ini akan menganalisis topologi yang bernama Cascade H-Bridge Dual Active Switched- Capacitor quasi Z-Source Inverter atau disebut sebagai CHB-DASC-qZSI. Topologi CHB-DASC-qZSI merupakan topologi inverter mengintegrasikan topologi DASC-qZSI tiga level yang menawarkan voltage gain yang tinggi dibanding impedance source inverter high voltage gain lain dengan CHB inverter sehingga mempunyai kelebihan dari topologi DASC-qZSI dan CHB inverter. Pada penelitian ini akan dilakukan analisis matematis yang divalidasi dengan hasil simulasi dan eksperimen protipe laboratorium topologi CHB-DASC-qZSI. Hasil dari analisis matematis berupa factor peningkat, penguatan tegangan tegangan, stress tegangan kapasitor, stress tegangan dan arus dioda, stress tegangan dan arus saklar aktif , stress tegangan perangkat switching inverter, stress arus induktor, dan riak arus induktor akan dibandingkan dengan topologi CHB-qZSI, CFL-qSBI, dan MqZS-HMI. Berdasarkan analisis yang dilakukan Topologi yang diusulkan mempunyai voltage gain yang besar dengan indeks modulasi yang tinggi, stres tegangan dioda dan saklar yang relatif rendah, riak arus induktor yang rendah dan stres tegangan perangkat switching inverter yang lebih rendah dibandingkan topologi terdahulu.
Analysis of Cascaded H-Bridge Dual Active Switched-Capacitor Quasi Z-Source Inverter
This research will analyze a topology called the Cascade H-Bridge Dual Active Switched-Capacitor Quasi Z-Source Inverter or CHB-DASC-qZSI. The CHB-DASC-qZSI topology is an inverter topology integrating a three-level DASC-qZSI topology that offers higher voltage gain than other high voltage gain impedance sources inverter with CHB inverters so that has the advantages of DASC-qZSI and CHB inverter topologies. In this study, mathematical analysis can be validated with the simulation and experimental results of the CHB-DASC-qZSI topology prototype. The results of the mathematical analysis such as boost factor, voltage gain, capacitor voltage stress, diode voltage and current stress, active switch voltage and current stress, inverter switching device voltage stress, current stress inductor, and inductor current ripple will be compared with the CHB-qZSI, CFL-qSBI, and MqZS-HMI. Based on the analysis, the proposed topology has a large voltage gain with a high modulation index, relatively low diode and switch voltage stress, low inductor current ripple, and lower voltage stress of the inverter switching device compared to the previous topologies.